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參數(shù)資料
| 型號(hào)： | UPA1952 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 71K |
| 代理商： | UPA1952 |
Data Sheet G15933EJ1V0DS
3
μ
PA1952
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm, t
≤
5 sec.
1 unit
2 units
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- 0.01
- 0.1
- 1
- 10
- 100
- 0.1
- 1
- 10
- 100
100 ms
10 ms
I
D(pulse)
I
D(DC)
PW = 1 ms
R
DS(on)
Limited
(V
GS
=
4.5 V)
Mounted on FR-4 board
of 5000 mm
2
x 1.1 mm
5 s (2 units)
5 s (1 unit)
Single pulse
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
1
10
100
1000
P
D
(FET1) : P
D
(FET2) = 1: 1
P
D
(FET1) : P
D
(FET2) = 1: 0
Single pulse
Mounted on FR-4 board of
5000 mm
2
x 1.1 mm
PW - Pulse Width - s
1 m
10 m
100 m
1
10
100
1000
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|---|---|
| UPA1952TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2756GR | SWITCHING N-CHANNEL POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1952TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1952TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1970 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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