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參數(shù)資料
| 型號(hào)： | UPA1952 |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | UPA1952 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
μ
PA1952
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. G15933EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The
μ
PA1952 is a switching device, which can be driven
directly by a 1.8 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
FEATURES
1.8 V drive available
Low on-state resistance
R
DS(on)1
= 135 m
MAX. (V
GS
=
4.5V, I
D
=
1.0 A)
R
DS(on)2
= 183 m
MAX. (V
GS
=
2.5 V, I
D
=
1.0 A)
R
DS(on)3
= 284 m
MAX. (V
GS
=
1.8 V, I
D
=
0.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA1952TE
SC-95 (Mini Mold Thin Type)
Marking: TP
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
m
8.0
m
2.0
m
8.0
1.15
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation (2 units)
Note2
Total Power Dissipation (1 unit)
Note2
I
D(DC)
A
I
D(pulse)
A
P
T1
W
P
T2
0.57
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 board of 5000 mm
2
x 1.1 mm, t
≤
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUITS
Source 1
Body
Diode
Gate
Protection
Diode
Gate 1
Drain 1
Source 2
Body
Diode
Gate
Protection
Diode
Gate 2
Drain 2
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
2
1
0.95
1
2
3
6
5
4
1.9
2.9 ±0.2
0.32
+0.1
0.95
0
+
–
4
: Drain 2
3: Gate 2
2: Source 2
6: Drain 1
1: Gate 1
5: Source 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1952TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2756GR | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2780GR | SWITCHING N-CHANNEL POWER MOSFET/SCHOTTKY BARRIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1952TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1952TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1970 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1970TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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