參數(shù)資料
型號(hào): TPC6104
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型(U型MOSIII)
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 205K
代理商: TPC6104
TPC6104
2004-07-06
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
8 V, V
DS
=
0 V
±
10
μ
A
Drain cut-off current
I
DSS
V
DS
=
20 V, V
GS
=
0 V
10
μ
A
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
10 mA, V
GS
=
8 V
12
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
200
μ
A
0.5
1.2
V
R
DS (ON)
V
GS
=
1.8 V, I
D
=
1.4 A
78
120
R
DS (ON)
V
GS
=
2.5 V, I
D
=
2.8 A
49
60
Drain-source ON resistance
R
DS (ON)
V
GS
=
4.5 V, I
D
=
2.8 A
33
40
m
Forward transfer admittance
|Y
fs
|
V
DS
=
10 V, I
D
=
2.8 A
6
12
S
Input capacitance
C
iss
1430
Reverse transfer capacitance
C
rss
200
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
240
pF
Rise time
t
r
8.5
Turn-on time
t
on
15
Fall time
t
f
20
Switching time
Turn-off time
t
off
Duty
<
1%, t
w
=
10
μ
s
66
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
19
Gate-source charge
Q
gs
14
Gate-drain (“miller”) charge
Q
gd
V
DD
16 V, V
GS
=
5 V,
I
D
=
5.5 A
5
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse (Note 1)
I
DRP
22
A
Forward voltage (diode)
V
DSF
I
DR
=
5.5 A, V
GS
=
0 V
1.2
V
R
L
=
V
DD
10 V
5 V
V
GS
0 V
4
I
D
=
2.8 A
V
OUT
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