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參數(shù)資料
| 型號： | TPC8014 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山型（U型馬鞍山三） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 213K |
| 代理商： | TPC8014 |
TPC8014
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPC8014
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 11 m
(typ.)
High forward transfer admittance: |Y
fs
| = 10 S (typ.)
Low leakage current: I
DSS
= 10 μA (max) (V
DS
= 30 V)
Enhancement mode: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
11
Drain current
Pulse (Note 1)
I
DP
44
A
Drain power dissipation
(t
=
10 s)
(Note 2a)
P
D
1.9
W
Drain power dissipation
(t
=
10 s)
(Note 2b)
P
D
1.0
W
Single pulse avalanche energy
(Note 3)
E
AS
157
mJ
Avalanche current
I
AR
11
A
Repetitive avalanche energy
(Note 2a) (Note 4)
E
AR
0.19
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.08 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4
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