參數(shù)資料
型號(hào)： TPC8014
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（U型馬鞍山三）
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 213K
代理商： TPC8014
TPC8014
2004-07-06
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2a)
R
th (ch-a)
65.8
°C/W
Thermal resistance, channel to ambient
(t
=
10 s)
(Note 2b)
R
th (ch-a)
125
°C/W
Marking
(Note 5)
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
=
24 V, T
ch
=
25°C (initial), L
=
1.0 mH, R
G
=
25
, I
AR
=
11 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
on lower left of the marking indicates Pin 1.
※
Weekly code:
(a)
FR-4
25.4
×
25.4
×
0.8
(unit: mm)
(b)
FR-4
25.4
×
25.4
×
0.8
(unit: mm)
(Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
TP C8 014
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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