參數(shù)資料
型號(hào): TN28F020-150
廠商: INTEL CORP
元件分類: DRAM
英文描述: 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
封裝: 0.450 X 0.550 INCH, PLASTIC, LCC-32
文件頁(yè)數(shù): 36/38頁(yè)
文件大小: 878K
代理商: TN28F020-150
28F020
E
36
NOTES:
1.
Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read-Only Operations.
Guaranteed by design.
The integrated stop timer terminates the programming/erase operations, thus eliminating the need for a maximum
specification.
See High Speed AC Testing Input/Output Waveform(Figure 8) and High Speed AC Testing Load Circuit(Figure 9) for
testing characteristics.
Minimum specification for extended temperature product.
See Testing Input/Output Waveform(Figure 6) and AC Testing Load Circuit(Figure 7) for testing characteristics.
2.
3.
4.
5.
6.
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