參數(shù)資料
型號(hào)： TN28F020-150
廠(chǎng)商： INTEL CORP
元件分類(lèi)： DRAM
英文描述： 28F020 2048K (256K X 8) CMOS FLASH MEMORY
中文描述： 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
封裝： 0.450 X 0.550 INCH, PLASTIC, LCC-32
文件頁(yè)數(shù)： 18/38頁(yè)
文件大?。?/td> 878K
代理商： TN28F020-150
28F020
E
18
4.0 ELECTRICAL SPECIFICATIONS
4.1
Operating Temperature
During Read.........................
0 °C to +70 °C
(1)
During Erase/Program..........0 °C to +70 °C
(1)
Operating Temperature
During Read.....................–40 °C to +85 °C
(2)
During Erase/Program......–40 °C to +85 °C
(2)
Temperature Under Bias.........–10 °C to +80 °C
(1)
Temperature Under Bias.........–50 °C to +95 °C
(2)
Storage Temperature...............–65 °C to +125 °C
Voltage on Any Pin with
Respect to Ground ............–2.0 V to +7.0 V
(2)
Voltage on Pin A
9
with
Respect to Ground ........–2.0 V to +13.5 V
(2,3)
V
PP
Supply Voltage with
Respect to Ground
During Erase/Program...–2.0 V to +14.0 V
(2,3)
V
CC
Supply Voltage with
Respect to Ground ............–2.0 V to +7.0 V
(2)
Output Short Circuit Current..................100 mA
(4)
Absolute Maximum Ratings*
NOTICE: This is a production datasheet. The specifications
are subject to change without notice.
*WARNING: Stressing the device beyond the Absolute
Maximum Ratings may cause permanent damage. These
are stress ratings only. Operation beyond the Operating
Conditions is not recommended and extended exposure
beyond the Operating Conditions may affect device
reliability.
NOTES:
1.
Operating temperature is for commercial product
defined by this specification.
2.
Operating temperature is for extended temperature
product as defined by this specification.
3.
Minimum DC input voltage is
–0.5 V. During transitions,
inputs may undershoot to –2.0 V for periods less than
20 ns. Maximum DC voltage on output pins is V
+
0.5 V, which may overshoot to V
CC
+ 2.0 V for periods
less than 20 ns.
4.
Maximum DC voltage on A
or V
may overshoot to
+14.0 V for periods less than 20 ns.
5.
Output shorted for no more than one second. No more
than one output shorted at a time.
6.
See
Testing Input/Output Waveform
(Figure 6) and
AC
Testing Load Circuit
(Figure 7) for testing
characteristics.
7.
See
High Speed AC Testing Input/Output Waveform
(Figure 8) and
High Speed AC Testing Load Circuit
(Figure 9) for testing characteristics.
4.2
Operating Conditions
Limits
Symbol
Parameter
Min
Max
Unit
T
A
Operating Temperature
(1)
0
70
°C
T
A
Operating Temperature
(2)
–40
+85
°C
V
CC
V
CC
Supply Voltage (10%)
(6)
4.50
5.50
V
V
CC
V
CC
Supply Voltage (5%)
(7)
4.75
5.25
V
4.3
T
A
= 25 °C, f = 1.0 MHz
Capacitance
Limits
Symbol
Parameter
Notes
Min
Max
Unit
Conditions
C
IN
Address/Control Capacitance
1
8
pF
V
IN
= 0 V
C
OUT
Output Capacitance
1
12
pF
V
OUT
= 0 V
NOTE:
1.
Sampled, not 100% tested.
相關(guān)PDF資料
PDF描述
TN28F020-120 28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F512-120 512K(64Kx8)CMOS FLASH MEMORY
TN5C060-45 16 MACROCELL CMOS PLD
TN5C090-50 24 MACROCELL CMOS PLD
TN5C090 24 MACROCELL CMOS PLD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TN28F020-90 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY
TN28F512-120 制造商:Rochester Electronics LLC 功能描述: 制造商:Intel 功能描述:
TN29/19/15-3E25 制造商:FERROXCUBE 功能描述:FERRITE CORE TOROID 3E25 制造商:FERROXCUBE 功能描述:FERRITE TN29/19/15-3E25 制造商:Yageo / Ferroxcube 功能描述:FERRITE CORE, TOROID, 3E25 制造商:FERROXCUBE 功能描述:FERRITE CORE, TOROID, 3E25; Core Type:Toroid; Core Size:TN29; Material Grade:3E25; Effective Magnetic Path Length:73.2mm; Ae Effective Cross Section Area:73.9mm2; Inductance Factor Al:7000nH; SVHC:No SVHC (18-Jun-2012); External ;RoHS Compliant: Yes
TN29/19/7.5 制造商:FERROXCUBE 制造商全稱(chēng):Ferroxcube International Holding B.V. 功能描述:Ferrite toroids
TN29/19/7.5-3C11 制造商:Yageo / Ferroxcube 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠(chǎng)商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*