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參數(shù)資料
| 型號： | THS4215DGNRG4 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | LOW-DISTORTION HIGH-SPEED VOLTAGE FEEDBACK AMPLIFIER |
| 中文描述： | 低失真高速電壓反饋型放大器 |
| 文件頁數(shù)： | 28/41頁 |
| 文件大?。?/td> | 1591K |
| 代理商： | THS4215DGNRG4 |
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THERMAL ANALYSIS
The THS4211 device does not incorporate automatic
thermal shutoff protection, so the designer must take
care to ensure that the design does not violate the
absolute maximum junction temperature of the de-
vice. Failure may result if the absolute maximum
junction temperature of 150
°
C is exceeded.
The thermal characteristics of the device are dictated
by the package and the PC board. Maximum power
dissipation for a given package can be calculated
using Equation 7:
2
1.5
1
0
-40
-20
T
A
- Ambient Temperature -
°
C
θ
JA
= 170
°
C/W for 8-Pin SOIC (D)
θ
JA
= 58.4
°
C/W for 8-Pin MSOP (DGN)
T
J
= 150
°
C, No Airflow
0
20
-
P
2.5
3
3.5
40
60
80
8-Pin DGN Package
0.5
8-Pin D Package
DESIGN TOOLS
Performance vs Package Options
P
Dmax
T
max
–T
A
JA
where
P
Dmax
is the maximum power dissipation in the amplifier (W).
T
max
is the absolute maximum junction temperature (
°
C)
.
T
A
is the ambient temperature (
°
C).
θ
JA
=
θ
JC
+
θ
CA
θ
JC
is the thermal coefficient from the silicon junctions to the
case (
°
C/W).
θ
CA
is the thermal coefficient from the case to ambient air
(
°
C/W).
THS4211
THS4215
SLOS400D–SEPTEMBER 2002–REVISED NOVEMBER 2004
soldered to a copper plane to fully use the heat
dissipation properties of the PowerPAD. The SOIC
package, on the other hand, is highly dependent on
how it is mounted on the PCB. As more trace and
copper area is placed around the device,
θ
JA
de-
creases and the heat dissipation capability increases.
For a single package, the sum of the RMS output
currents and voltages should be used to choose the
proper package.
Figure 91. Maximum Power Dissipation vs
Ambient Temperature
When determining whether or not the device satisfies
the maximum power dissipation requirement, it is
important to consider not only quiescent power dissi-
pation, but also dynamic power dissipation. Often
maximum power dissipation is difficult to quantify
because the signal pattern is inconsistent, but an
estimate of the RMS power dissipation can provide
visibility into a possible problem.
The THS4211 and THS4215 are offered in a different
package options. However, performance may be
limited due to package parasitics and lead inductance
in some packages. In order to achieve maximum
performance of the THS4211 and THS4215, Texas
Instruments recommends using the leadless MSOP
(DRB) or MSOP (DGN) packages, in additions to
proper high-speed PCB layout. Figure 92 shows the
unity gain frequency response of the THS4211 using
the leadless MSOP, MSOP, and SOIC package for
comparison. Using the THS4211 and THS4215 in a
unity gain with the SOIC package may result in the
device becoming unstable. In higher gain configur-
ations, this effect is mitigated by the reduced
bandwidth. As such, the SOIC is suitable for appli-
cation with gains equal to or higher than +2 V/V or
(–1 V/V).
(7)
For systems where heat dissipation is more critical,
the THS4211 is offered in an 8-pin MSOP with
PowerPAD. The thermal coefficient for the MSOP
PowerPAD package is substantially improved over
the traditional SOIC. Maximum power dissipation
levels are depicted in the graph for the two packages.
The data for the DGN package assumes a board
layout that follows the PowerPAD layout guidelines
referenced above and detailed in the PowerPAD
application notes in the
Additional Reference Material
section at the end of the data sheet.
28
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| THS4215DR | 功能描述:高速運算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4215DRB | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| THS4215DRBR | 功能描述:高速運算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4215DRBRG4 | 功能描述:高速運算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| THS4215DRBT | 功能描述:高速運算放大器 Super-Fast Ultr-Lo- Distortion Hi-Speed RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 電壓增益 dB:116 dB 輸入補償電壓:0.5 mV 轉(zhuǎn)換速度:55 V/us 工作電源電壓:36 V 電源電流:7.5 mA 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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