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參數(shù)資料
| 型號： | TBB1002 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| 中文描述： | 雙內(nèi)建偏置電路場效應(yīng)晶體管集成電路甚高頻/超高頻射頻放大器 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 66K |
| 代理商： | TBB1002 |
TBB1002
8
50
40
30
20
10
0
1
2
3
4
5
V = 5 V
V = 4 V
Gate1 Voltage V (V)
Forward Transfer Admittance
vs. Gate1 Voltage (FET2)
f
F
120 k
RG
82 k
0
1
2
3
4
4
3
2
1
0
Gate2 to Source Voltage V (V)
I
Input Capacitance vs.
Gate2 to Source Voltage (FET2)
30
25
20
15
10
5
0
10
20
Gate Resistance R (k
)
50
100 200
500 1000
V = 5 V
V = 5 V
V = 4 V
Drain Current vs.
Gate Resistance (FET2)
D
D
40
35
30
25
20
15
10
10
20
Gate Resistance R (k
)
50
100 200
500 1000
V = 5 V
V = 5 V
V = 4 V
f = 200 MHz
Power Gain vs.
Gate Resistance (FET2)
P
V = 5 V
V = 5 V
R = 82 k
f = 1 MHz
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TBB1002_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002BMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
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