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參數(shù)資料
| 型號： | TBB1002 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| 中文描述： | 雙內(nèi)建偏置電路場效應(yīng)晶體管集成電路甚高頻/超高頻射頻放大器 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 66K |
| 代理商： | TBB1002 |
TBB1002
7
0
1
2
3
4
4
3
2
1
0
Gate2 to Source Voltage V (V)
I
Input Capacitance vs.
Gate2 to Source Voltage (FET1)
0
1
2
3
4
5
25
20
15
10
5
V = 4 V
V = V
DS
D
D
Typical Output Characteristics (FET2)
Drain to Source Voltage V (V)
R =5
G
6
8
100k
120k
150k
25
20
15
10
5
0
1
2
3
4
5
V = 5 V
R = 82 k
Drain Current vs.
Gate1 Voltage (FET2)
Gate1 Voltage V (V)
D
D
2 V
V = 1 V
4 V
3 V
30
25
20
15
10
5
0
10
20
Gate Resistance R (k
)
50
100 200
500 1000
V = 5 V
V = 5 V
V = 4 V
Drain Current vs.
Gate Resistance (FET1)
D
D
V = 5 V
V = 5 V
R = 100 k
f = 1 MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TBB1002_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002BMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
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