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參數(shù)資料
| 型號(hào)： | TBB1002 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| 中文描述： | 雙內(nèi)建偏置電路場(chǎng)效應(yīng)晶體管集成電路甚高頻/超高頻射頻放大器 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 66K |
| 代理商： | TBB1002 |
TBB1002
5
Equivalent Circuit
BBFET-(1)
BBFET-(2)
No.1
No.2
No.3
No.6
No.5
No.4
Gate-1(1)
Source
Drain(1)
Gate-1(2)
Gate-2
Drain(2)
200 MHz Power Gain, Noise Figure Test Circuit
V
Input(50
)
1000p
36p
1000p
L1
V = V
R
G
TWINBBFET
RFC
Output(50
)
L2
1000p
10p max
1000p
1000p
47k
1SV70
1000p
1000p
1000p
47k
47k
82k
V
V
Unit : Resistance (
)
Capacitance (F)
1SV70
L1 :
φ
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
φ
1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
φ
1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TBB1002_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002BMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
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