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參數(shù)資料
| 型號： | TBB1002 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| 中文描述： | 雙內(nèi)建偏置電路場效應(yīng)晶體管集成電路甚高頻/超高頻射頻放大器 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 66K |
| 代理商： | TBB1002 |
TBB1002
4
Test Circuits
DC Biasing Circuit for Operating Characteristic Items
(I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
Measurment of FET1
Gate 1
Source
Gate 2
R
G
Drain
A
I
D
V
G2
V
G1
V
D
Open
Open
Measurment of FET2
Gate 1
Source
Gate 2
Drain
V
G2
R
G
V
G1
A
I
D
V
D
Open
Open
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TBB1002_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002_11 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1002BMTL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
| TBB1004_06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier |
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