參數(shù)資料
型號： STGB7NB60KT4
英文描述： Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:25V; Capacitance:35pF RoHS Compliant: Yes
中文描述： 晶體管| IGBT的|正陳| 600V的五（巴西）國際消費(fèi)電子展|第7A一（c）|至263AB
文件頁數(shù)： 1/14頁
文件大?。?/td> 270K
代理商： STGB7NB60KT4
1/14
February 2002
STGP7NB60K - STGP7NB60KFP
STGB7NB60K - STGD7NB60K
N-CHANNEL 7A - 600V
- TO-220/FP/D
2
PAK/DPAK
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
I
LOW ON-VOLTAGE DROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
OFF LOSSES INCLUDE TAIL CURRENT
I
VERY HIGH FREQUENCY OPERATION
I
SHORT CIRCUIT RATED
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS ANDPFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat)
(Typ)
@125
°
C
I
C
@125
°
C
STGP7NB60K
STGP7NB60KFP
STGB7NB60K
STGD7NB60K
600 V
600 V
600 V
600 V
< 1.9
V
< 1.9 V
< 1.9 V
< 1.9 V
7 A
7 A
7 A
7 A
MARKING
PACKAGE
PACKAGING
STGP7NB60K
GP7NB60K
TO-220
TUBE
STGP7NB60KFP
GP7NB60KFP
TO-220FP
TUBE
STGB7NB60KT4
GB7NB60K
D
2
PAK
TAPE & REEL
STGD7NB60KT4
GD7NB60K
DPAK
TAPE & REEL
TO-220
1
2
3
2
3
TO-220FP
1
3
D
2
PAK
1
3
DPAK
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STGD3NB60HD N-CHANNEL 3A 600V DPAK POWERMESH IGBT
STGD3NB60HDT4 N-CHANNEL 3A 600V DPAK POWERMESH IGBT
STGD3NB60HT4 Transient Surge Protection Thyristor; Thyristor Type:Sidac; Leaded Process Compatible:No; Package/Case:DO-214AA; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:50pF; Holding Current:150mA RoHS Compliant: No
STGD3NB60KD SIDACTOR - TECCOR P0640SC MC
STGD3NB60M 58V SURGECTOR, DO-214AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STGB7NB60MDT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB7NC60HD 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 25A D2PAK
STGB7NC60HDT4 功能描述:IGBT 晶體管 N-Ch 600 Volt 14 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB7NC60HT4 功能描述:IGBT 晶體管 IGBT 600 V Power Bipolar D2PAK Trans RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
STGB8NC60K 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*