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參數(shù)資料
| 型號(hào)： | Si4884DY |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
| 中文描述： | N溝道場(chǎng)效應(yīng)管同步降壓穩(wěn)壓控制器輸出電壓低 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | SI4884DY |
Philips Semiconductors
SI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
9 of 12
9397 750 09582
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6.
Package outline
Fig 14. SOT96-1 (SO8).
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
θ
A
A
1
A
2
b
p
D
H
E
L
p
L
Q
detail X
E
Z
e
c
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03S
MS-012AA
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
95-02-04
97-05-22
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PDF描述 |
|---|---|
| SI4884DY | Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET |
| SI5311-H | IRED |
| SI5311-H(B) | IRED |
| SI5411-H | IRED |
| SI5411-H(B) | IRED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4884DY | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| SI4884DY-E3 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1-E3 | 功能描述:MOSFET 30V 12A 2.95W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4884DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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