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參數(shù)資料
| 型號(hào)： | SAB88C166W-5M |
| 廠商： | SIEMENS A G |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-Bit CMOS Single-Chip Microcontrollers with/without oscillator prescaler with 32 KByte Flash EPROM |
| 中文描述： | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 |
| 文件頁(yè)數(shù)： | 24/58頁(yè) |
| 文件大?。?/td> | 611K |
| 代理商： | SAB88C166W-5M |
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SAB 88C166(W)
Semiconductor Group
23
Flash Erase Example
This example describes the Flash erase algorithm. The four banks of the Flash memory can be
erased separately. The algorithm erases the Flash memory bank, which is selected by bitfield BE in
the FCR. Start address and size of the selected Flash bank have to be considered.
Note:
Before a bank can be erased, all its contents must be programmed to ‘0000
H
’. This is
required by the physics of the Flash memory cells and is done with the Flash programming
algorithm already described.
Figure 8
Memory Banking for Flash Erasure
The FCR has been defined with an EQU assembler directive. Accesses to bits of the FCR are made
via an auxiliary GPR, as the FCR itself is not bit-addressable.
The shown example uses the following assumptions:
G
Pin V
PP
/EBC1 receives a proper V
PP
supply voltage.
G
The SAB 88C166(W) runs at 20 MHz CPU clock (absolute time delays refer to it).
G
The Flash memory is mapped to segment 1. All DPPs are set correctly.
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