參數(shù)資料
型號: S29PL256N70GFW003
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
封裝: 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁數(shù): 63/74頁
文件大小: 1968K
代理商: S29PL256N70GFW003
June 6, 2007 S29PL-N_00_A5
S29PL-N MirrorBit
Flash Family
63
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 11.11
Chip/Sector Erase Operation Timings
Note
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see
Write Operation Status on page 37
)
Figure 11.12
Back-to-back Read/Write Cycle Timings
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
Status
D
OUT
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
OE#
CE#
WE#
Addresses
t
OH
Data
Valid
In
Valid
In
Valid PA
Valid RA
t
WC
t
WPH
t
AH
t
WP
t
DS
t
DH
t
AS
t
RC
t
CE
t
AH
Valid
Out
t
OE
t
ACC
t
OEH
t
GHWL
t
DF
Valid
In
CE# Controlled Write Cycles
WE# Controlled Write Cycle
Valid PA
Valid PA
t
CP
t
CPH
t
WC
t
WC
Read Cycle
t
SR/W
t
AS
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