參數(shù)資料
型號(hào)： S29PL256N70GFW003
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
封裝： 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁(yè)數(shù)： 27/74頁(yè)
文件大?。?/td> 1968K
代理商： S29PL256N70GFW003
June 6, 2007 S29PL-N_00_A5
S29PL-N MirrorBit
Flash Family
27
D a t a
S h e e t
( P r e l i m i n a r y )
7.4.2
Write Buffer Programming
Write Buffer Programming allows the system to write a maximum of 32 words in one programming operation.
This results in a faster effective word programming time than the standard
word
programming algorithms. The
Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed
by a third write cycle containing the Write Buffer Load command written at the Sector Address in which
programming occurs. At this point, the system writes the number of
word locations minus 1
that is loaded into
the page buffer at the Sector Address in which programming occurs. This tells the device how many write
buffer addresses are loaded with data and therefore when to expect the
Program Buffer to Flash
confirm
command. The number of locations to program cannot exceed the size of the write buffer or the operation
aborts. (Number loaded = the number of locations to program minus 1. For example, if the system programs
6 address locations, then 05h should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first address/data
pair to be programmed, and selects the
write-buffer-page
address. All subsequent address/data pairs must
fall within the elected-write-buffer-page.
The
write-buffer-page
is selected by using the addresses A
max
– A5.
The
write-buffer-page
addresses must be the same for all address/data pairs loaded into the write buffer.
(This means Write Buffer Programming cannot be performed across multiple
write-buffer-page
. This also
means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to
load programming data outside of the selected
write-buffer-page
, the operation
ABORTS
.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the
write buffer.
Note that if a Write Buffer address location is loaded multiple times, the
address/data pair
counter
decrements for every data load operation. Also, the last data loaded at a location before the
Program Buffer
to Flash
confirm command is programmed into the device. The software takes care of the ramifications of
loading a write-buffer location more than once. The counter decrements for each data load operation,
NOT
for
each unique write-buffer-address location. Once the specified number of write buffer locations have been
loaded, the system must then write the
Program Buffer to Flash
command at the Sector Address. Any other
address/data write combinations abort the Write Buffer Programming operation. The device then
goes
busy.
The Data Bar polling techniques should be used while monitoring the last address location loaded into the
write buffer. This eliminates the need to store an address in memory because the system can load the last
address location, issue the program confirm command at the last loaded address location, and then data bar
poll at that same address.
The write-buffer
embedded
programming operation can be suspended using the standard suspend/resume
commands. Upon successful completion of the Write Buffer Programming operation, the device returns to
READ mode.
If the write buffer command sequence is entered incorrectly the device enters write buffer abort. When an
abort occurs the
write-to buffer-abort reset
command must be issued to return the device to read mode.
The Write Buffer Programming Sequence is
ABORTED
under any of the following conditions:
Load a value that is greater than the page buffer size during the
Number of Locations to Program
step.
Write to an address in a sector different than the one specified during the
Write-Buffer-Load
command.
Write an Address/Data pair to a different write-buffer-page than the one selected by the
Starting Address
during the
write buffer data loading
stage of the operation.
Write data other than the
Confirm Command
after the specified number of
data load
cycles.
Use of the write buffer is strongly recommended for programming when multiple words are to be
programmed. Write buffer programming is approximately four times faster than programming one word at a
time. Note that the Secured Silicon, the CFI functions, and the Autoselect Codes are not available for read
when a write buffer programming operation is in progress.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N70GFWW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N80FAI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N80FAI002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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