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| 型號： | S29GL512N |
| 廠商： | Spansion Inc. |
| 英文描述： | Replaced by PTB78560C : |
| 中文描述： | MirrorBit閃存系列 |
| 文件頁數(shù)： | 86/110頁 |
| 文件大小： | 2624K |
| 代理商： | S29GL512N |
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86
S29GLxxxN MirrorBitTM Flash Family
27631A4 May 13, 2004
A d v a n c e I n f o r m a t i o n
DC Characteristics
CMOS Compatible
Notes:
1.
2.
3.
4.
5.
6.
The I
CC
current listed is typically less than TBD mA/MHz, with OE# at V
IH
.
I
CC
active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress.
Not 100% tested.
Automatic sleep mode enables the lower power mode when addresses remain stable tor t
ACC
+ 30 ns.
V
IO
= 1.65–1.95 V or 2.7–3.6 V
V
CC
= 3 V and V
IO
= 3V or 1.8V. When V
IO
is at 1.8V, I/O pins cannot operate at 3V.
Parameter
Symbol
Parameter Description
( Notes)
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current (1)
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
± 1.0
μA
I
LIT
A9 Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
± 1.0
μA
I
IO1
V
Active Read Current
(Switching Current)
V
IO
= 1.8 V, CE# = V
IL
, OE# = V
IL
, WE# = V
IL
,
f
=
5 MHz
5
10
μA
I
IO2
V
IO
Non-Active Output
CE# = V
IL,
OE# = V
IH
0.2
10
mA
I
CC1
V
CC
Active Read Current (1)
CE# = V
OE# = V
IH
, V
CC
= V
CCmax
,
f
= 5 MHz, Byte Mode
25
30
mA
CE# = V
OE# = V
, V
CC
= V
CCmax
,
f
= 5 MHz, Word Mode
25
30
I
CC2
V
CC
Initial Page Read Current (1)
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
50
60
mA
I
CC3
V
CC
Intra-Page Read Curren
t (1)
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
10
20
mA
I
CC4
V
CC
Active Erase/Program Current (2, 3)
CE# = V
IL,
OE# = V
IH,
V
CC
= V
CCmax
50
70
mA
I
CC5
V
CC
Standby Current
CE#, RESET# = V
SS
± 0.3 V, OE# = V
IH,
V
CC
= V
CCmax
V
IL
= V
SS
1
5
μA
I
CC6
V
CC
Reset Current
V
CC
= V
CCmax;
V
= V
+ 0.3 V/-0.1V,
RESET# = V
SS
± 0.3 V
1
5
μA
I
CC7
Automatic Sleep Mode (4)
V
CC
= V
CCmax
V
IH
= V
CC
V
= V
+ 0.3 V/-0.1V,
WP#/ACC = V
IH
1
5
μA
I
ACC
ACC Accelerated Program Current
CE# = V
OE# = V
IH,
V
CC
= V
CCmax,
WP#/ACC = V
IH
WP#/ACC
pin
10
20
mA
V
CC
pin
30
60
V
IL
Input Low Voltage (5)
–0.1
0.3 x V
IO
V
V
IH
Input High Voltage (5)
0.7 x V
IO
V
IO
+ 0.3
V
V
HH
Voltage for ACC Erase/Program
Acceleration
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
ID
Voltage for Autoselect and Temporary
Sector Unprotect
V
CC
= 2.7 –3.6 V
11.5
12.5
V
V
OL
Output Low Voltage (5)
I
OL
= 100 μA
0.15 x
V
IO
V
V
OH
Output High Voltage (5)
I
OH
= 100 μA
0.85 x V
IO
V
V
LKO
Low V
CC
Lock-Out Voltage (3)
2.3
2.5
V
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