參數(shù)資料
型號: S29GL512N
廠商: Spansion Inc.
英文描述: Replaced by PTB78560C :
中文描述: MirrorBit閃存系列
文件頁數(shù): 56/110頁
文件大?。?/td> 2624K
代理商: S29GL512N
56
S29GLxxxN MirrorBitTM Flash Family
27631A4 May 13, 2004
A d v a n c e I n f o r m a t i o n
Table 10. Device Geometry Definition
Addresses
( x16)
Addresses
( x8)
Data
Description
27h
4Eh
001Ah
0019h
0018h
Device Size = 2
N
byte
1A = 512 Mb, 19 = 256 Mb, 18 = 128 Mb
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0005h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device,
02h = boot device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
60h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
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