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參數(shù)資料
| 型號： | S29GL512N |
| 廠商： | Spansion Inc. |
| 英文描述： | Replaced by PTB78560C : |
| 中文描述： | MirrorBit閃存系列 |
| 文件頁數(shù)： | 1/110頁 |
| 文件大?。?/td> | 2624K |
| 代理商： | S29GL512N |
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This document contains information on a product under development at FASL LLC. The information is intended to help you evaluate this product. FASL LLC reserves the
right to change or discontinue work on this proposed product without notice.
Publication Number
27631
Revision
A
Amendment
4
Issue Date
May 13, 2004
ADVANCE
INFORMATION
S29GLxxxN MirrorBit
TM
Flash Family
S29GL512N, S29GL256N, S29GL128N
512 Megabit, 256 Megabit, and 128 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
110 nm MirrorBit process technology
Datasheet
Distinctive Characteristics
Architectural Advantages
Single pow er supply operation
— 3 volt read, erase, and program operations
Enhanced V ersatileI / O
control
— All input levels (address, control, and DQ input levels)
and outputs are determined by voltage on V
IO
input.
V
IO
range is 1.65 to V
CC
Manufactured on 110 nm MirrorBit process
technology
SecSi
( Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128
Kbyte) sectors
— S29GL256N: Two hundred fifty-six 64 Kword (128
Kbyte) sectors
— S29GL128N: One hundred twenty-eight 64 Kword
(128 Kbyte) sectors
Compatibility w ith J EDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles per sector typical
20-year data retention typical
Performance Characteristics
High performance
— 80 ns access time (S29GL128N, S29GL256N),
90 ns access time (S29GL512N)
— 8-word/16-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low pow er consumption ( typical values at 3.0 V , 5
MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 μA typical standby mode current
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Softw are & Hardw are Features
Softw are features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardw are features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| S29GL512N10FFI010 | 制造商:Spansion 功能描述:512M FLASH MEMORY 3V SPI 29GL512 |
| S29GL512N10FFI020 | 制造商:Spansion 功能描述:512M FLASH MEMORY 3V SPI 29GL512 |
| S29GL512N10TAI01 | 制造商:Spansion 功能描述: |
| S29GL512N10TFI010 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 512Mbit 64M/32M x 8bit/16bit 100ns 56-Pin TSOP Tray 制造商:Spansion 功能描述:Flash - NOR IC |
| S29GL512N10TFI013 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 512Mbit 64M/32M x 8bit/16bit 100ns 56-Pin TSOP T/R |
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