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參數(shù)資料
| 型號(hào)： | S29GL128P11FFIR10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁(yè)數(shù)： | 54/77頁(yè) |
| 文件大小： | 2121K |
| 代理商： | S29GL128P11FFIR10 |
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54
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Note
If V
IO
< V
CC
, the reference level is 0.5 V
IO
.
11.4
Key to Switching Waveforms
11.5
Switching Waveforms
Figure 11.4
Input Waveforms and Measurement Levels
Note
If V
IO
< V
CC
, the input measurement reference level is 0.5 V
IO
.
Table 11.1
Test Specifications
Test Condition
All Speeds
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–V
IO
0.5V
IO
0.5 V
IO
V
Input timing measurement reference levels (See Note)
V
Output timing measurement reference levels
V
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
V
IO
0.0 V
0.5 V
IO
0.5 V
IO
Output
Measurement Level
Input
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