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參數(shù)資料
| 型號： | S29GL128P11FFIR10 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 4/77頁 |
| 文件大?。?/td> | 2121K |
| 代理商： | S29GL128P11FFIR10 |
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4
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Performance Characteristics
Notes
1. Access times are dependent on V
CC
and V
IO
operating ranges.
See
Ordering Information
page for further details.
Regulated V
CC
: V
CC
= 3.0–3.6 V.
Full V
CC
: V
CC
= V
IO
= 2.7–3.6 V.
VersatileIO V
IO
: V
IO
= 1.65–V
CC
, V
CC
= 3 V.
2. Contact a sales representative for availability.
Maximum Read Access Times (ns)
Density
Voltage Range
(1)
Random Access
Time (t
ACC
)
Page Access Time
(t
PACC
)
CE# Access Time
(t
CE
)
OE# Access Time
(t
OE
)
128 & 256 Mb
Regulated V
CC
90
25
90
25
Full V
CC
100/110
100/110
VersatileIO V
IO
110
110
512 Mb
Regulated V
CC
100
25
100
25
Full V
CC
100
(2)
/110
100
(2)
/110
VersatileIO V
IO
110
(2)
/120
110
(2)
/120
1 Gb
Regulated V
CC
110
25
110
25
Full V
CC
120
120
VersatileIO V
IO
130
130
Current Consumption (typical values)
Random Access Read (
f
= 5 MHz)
30 mA
8-Word Page Read (
f
= 10 MHz)
1 mA
Program/Erase
50 mA
Standby
1 μA
Program & Erase Times (typical values)
Single Word Programming
60 μs
Effective Write Buffer Programming (V
CC
) Per Word
15 μs
Effective Write Buffer Programming (V
HH
) Per Word
13.5 μs
Sector Erase Time (64 Kword Sector)
0.5 s
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|---|---|
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