參數(shù)資料
型號： S29GL064M90FBIR22
廠商： Spansion Inc.
英文描述： MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
中文描述： 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù)： 160/160頁
文件大小： 2142K
代理商： S29GL064M90FBIR22
160
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Logic Symbols
Added V
IO
on all models except R3 and R4.
Figure 3 Write Buffer Programming Operation
Corrected the DQ locations and added callouts to notes one through three.
DC Characteristics
Corrected test conditions for I
CC6
.
Revision A+5 (April 30, 2004)
Ordering Information - S29GL032M
Added R5 and R6 model numbers to the breakout table.
Updated the Valid Combinations for BGA packages table to reflect model numbers
R5 and R6.
Ordering Information - S29GL064M
Revised R8 and R9 model numbers on the breakout table.
Updated the Valid Combinations for TSOP packages table.
Ordering Information - S29GL0128M
Added R8 and R9 model numbers to the breakout table.
Revised the Package Material Set options on the breakout table.
Updated the Valid Combinations for TSOP packages table.
Ordering Information - S29GL256M
Revised the Package Material Set options on the breakout table.
Connection Diagrams (56-Pin TSOP)
Added a callout to Note 3 for pin 15.
Device Geometry Definition table
Revised the data and description information for addresses: 28h/50h and
29h/52h.
Primary Vendor Specific Extended Query table
Revised the data and description information for addresses: 45h/8Ah (x16/x8)
Revised the data information for addresses: 4Ch/98h (x16/x8)
Erase and Programming Performance table
Revised notes 1 and 2 below the table.
Trademarks and Notice
Copyright 2004 FASL LLC. All rights reserved.
Spansion, the Spansion logo, MirrorBit, and combinations thereof are registered trademarks of FASL LLC.
ExpressFlash is a trademark of FASL LLC.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
S29GL064M90FBIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR30 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR32 MOSFET, Switching; VDSS (V): 20; ID (A): 90; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.0024; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0035]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6800; toff (µs) typ: 0.11; Package: TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90FFIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
S29GL064M90TAIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
S29GL064M90TAIR3 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP
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