參數(shù)資料
型號(hào): S29GL064M90FBIR22
廠商: Spansion Inc.
英文描述: MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù): 134/160頁
文件大小: 2142K
代理商: S29GL064M90FBIR22
134
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
AC Characteristics
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array
data read cycle.
Figure 19. Data# Polling Timings
(During Embedded Algorithms)
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0–DQ6
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
CH
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
POLL
t
ACC
t
CE
t
OEH
t
DF
t
OH
t
RC
相關(guān)PDF資料
PDF描述
S29GL064M90FBIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR30 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR32 MOSFET, Switching; VDSS (V): 20; ID (A): 90; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.0024; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0035]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6800; toff (µs) typ: 0.11; Package: TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90FFIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
S29GL064M90TAIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
S29GL064M90TAIR3 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP