參數(shù)資料
型號： S29GL064M90FAIR32
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MOSFET, Switching; VDSS (V): 250; ID (A): 12; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.13; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1300; toff (µs) typ: 0.08; Package: TO-220FN
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, FORTIFIED, BGA-64
文件頁數(shù)： 22/160頁
文件大?。?/td> 2142K
代理商： S29GL064M90FAIR32
22
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Ordering Information-S29GL032M
S29GL032M Standard Products
Standard products are available in several packages and operating ranges. The
order number (Valid Combination) is formed by a combination of the following:
S29GL032M
10
T
A
I
R1
2
PACKAGE TYPE
0
= Tray
2
= 7” Tape and Reel
3
= 13” Tape and Reel
MODEL NUMBER
R0
= x8, V
CC
=3.0-3.6V, Uniform sector device
R1
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, highest address sector
protected when WP#/ACC=V
IL
R2
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, lowest address sector
protected when WP#/ACC=V
IL
R3
= x8/x16, V
CC
=3.0-3.6V, Top boot sector device, top two address sectors
protected when WP#/ACC=V
IL
R4
= x8/x16, V
CC
=3.0-3.6V, Bottom boot sector device, bottom two
address sectors protected when WP#/ACC=V
IL
R5
= x8/x16, V
CC
=3.0-3.6V, Top boot sector device, top two address sectors
protected when WP#/ACC=V
IL,
BGA-48P-M20 package only
R6
= x8/x16, V
CC
=3.0-3.6V, Bottom boot sector device, bottom two
address sectors protected when WP#/ACC=V
IL
BGA-48P-M20 package
only
TEMPERATURE RANGE
I
= Industrial (–40
°
C to +85
°
C)
PACKAGE MATERIAL SET
A
= Standard
F
= Pb-Free
B
= Standard
C
= Pb-Free
PACKAGE TYPE
T
= Thin Small Outline Package (TSOP) Standard Pinout
B
= Fine-pitch Ball-Grid Array Package
F
= Fortified Ball-Grid Array Package
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
S29GL032M
32 Megabit Page-Mode Flash Memory Manufactured using 0.23 um MirrorBit
TM
Process Technology, 3.0 Volt-only Read, Program, and Erase
相關(guān)PDF資料
PDF描述
S29GL064M90FAIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR00 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR20 MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90FAIR40 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 64-Pin Fortified BGA Tray
S29GL064M90FFIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
S29GL064M90TAIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
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