參數(shù)資料
型號: S29GL064M90FAIR32
廠商: SPANSION LLC
元件分類: DRAM
英文描述: MOSFET, Switching; VDSS (V): 250; ID (A): 12; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.13; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1300; toff (µs) typ: 0.08; Package: TO-220FN
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, FORTIFIED, BGA-64
文件頁數(shù): 134/160頁
文件大?。?/td> 2142K
代理商: S29GL064M90FAIR32
134
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
AC Characteristics
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array
data read cycle.
Figure 19. Data# Polling Timings
(During Embedded Algorithms)
WE#
CE#
OE#
High Z
t
OE
High Z
DQ7
DQ0–DQ6
RY/BY#
t
BUSY
Complement
True
Addresses
VA
t
CH
VA
VA
Status Data
Complement
Status Data
True
Valid Data
Valid Data
t
POLL
t
ACC
t
CE
t
OEH
t
DF
t
OH
t
RC
相關(guān)PDF資料
PDF描述
S29GL064M90FAIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR00 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR20 MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
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S29GL064M90TAIR2 制造商:Spansion 功能描述:
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