- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374649 > S25FL004AOLMAI001 (Spansion Inc.) 4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface PDF資料下載
參數(shù)資料
| 型號： | S25FL004AOLMAI001 |
| 廠商： | Spansion Inc. |
| 英文描述： | 4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| 中文描述： | 4兆位閃存的CMOS 3.0伏，50赫茲SPI總線接口內(nèi)存 |
| 文件頁數(shù)： | 27/39頁 |
| 文件大?。?/td> | 945K |
| 代理商： | S25FL004AOLMAI001 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當(dāng)前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁
March 28, 2005 S25FL004A_00_A1
S25FL Family (Serial Peripheral Interface) S25FL004A
25
A d v a n c e I n f o r m a t i o n
Figure 14. Bulk Erase (BE) Instruction Sequence
Deep Power Down (DP)
The Deep Power Down (DP) instruction puts the device in the lowest current
mode of 1
μ
A typical.
It is recommended that the standard Standby mode be used for the lowest power
current draw, as well as the Deep Power Down (DP) as an extra software protec-
tion mechanism when this device is not in active use. In this mode, the device
ignores all Write, Program, and Erase instructions. Chip Select (CS#) must be
driven Low for the entire sequence duration.
The Deep Power Down (DP) instruction is entered by driving Chip Select (CS#)
Low, followed by the instruction code on Serial Data Input (SI). Chip Select (CS#)
must be driven Low for the entire sequence duration.
The instruction sequence is shown in
Figure 15, on page 26
.
Driving Chip Select (CS#) High after the eighth bit of the instruction code is
latched, places the device in Deep Power Down mode. The Deep Power Down
mode can only be entered by executing the Deep Power Down (DP) instruction to
reduce the standby current (from I
SB
to I
DP
as specified in
Table 8, on page 30
).
As soon as Chip Select (CS#) is driven high, it requires a delay of t
DP
currently in
progress before Deep Power Down mode is entered.
Once the device enters the Deep Power Down mode, all instructions are ignored
except the Release from Deep Power Down (RES) and Read Electronic Signature.
This releases the device from the Deep Power Down mode. The Release from
Deep Power Down and Read Electronic Signature (RES) instruction also allows the
device’s Electronic Signature to be output on Serial Data Output (SO).
The Deep Power Down mode automatically stops at Power-down, and the device
always powers up in the Standby mode.
Any Deep Power Down (DP) instruction, while an Erase, Program, or WRSR cycle
is in progress, is rejected without having any effect on the cycle in progress.
0
1
2
4
5
6
7
Instruction
CS#
SCK
SI
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S25FL004AOLMAI002 | 4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004AOLMAI003 | 4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004AOLMFI000 | 4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004AOLMFI001 | 4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004AOLMFI002 | 4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S25FL004AOLMAI002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004AOLMAI003 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004AOLMFI000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004AOLMFI001 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
| S25FL004AOLMFI002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4-Megabit CMOS 3.0 Volt Flash Memory with 50 Mhz SPI Bus Interface |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。