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參數(shù)資料
| 型號： | RFP2N08L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 2A, 80V, 0.140 Ohm, Logic Level,N-Channel Power MOSFET(2A, 80V, 0.140 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| 中文描述： | 2 A, 80 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | RFP2N08L |
6-251
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE TO THRESHOLD vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuit and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
100
0
50
150
200
1.0
1.5
0.5
I
D
= 2A, V
GS
= 5V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
N
O
-50
T
J
, JUNCTION TEMPERATURE (
o
C)
1.0
0.5
0
0
200
50
100
150
1.5
2.0
I
D
= 250
μ
A
V
DS
= V
GS
0
20
30
40
70
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
240
200
160
0
10
120
80
C
ISS
C
RSS
50
C
OSS
40
60
V
GS
= 0V, f = 0.1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
100
75
25
0
20
)
)
IG ACT
t, TIME (ms)
80
)
)
IG ACT
10
8
6
2
0
V
D
,
V
G
,
V
DD
= BV
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
R
L
= 50
, V
GS
= 5V
I
G(REF)
= 0.094mA
DESCENDING ORDER:
50
4
DRAIN SOURCE VOLTAGE
SGATE
VOLTAGE
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP2N08L, RFP2N10L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP2N10L | 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N10 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| RFP2N12 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP2N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N1093 | 制造商:Harris Corporation 功能描述: |
| RFP2N10L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP2N12 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 制造商:Harris Corporation 功能描述: |
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