參數(shù)資料
型號(hào)： RFP2N08L
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 2A, 80V, 0.140 Ohm, Logic Level,N-Channel Power MOSFET(2A, 80V, 0.140 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
中文描述： 2 A, 80 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 35K
代理商： RFP2N08L
6-249
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP2N08L
RFP2N10L
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80
100
V
80
100
V
2
2
A
5
5
A
±
10
±
10
V
25
25
W
0.2
0.2
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
-55 to 150
-55 to 150
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFP2N08L
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
80
-
-
V
RFP2N10L
100
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
-
2.0
V
Gate to Source Leakage
I
GSS
V
GS
=
±
10V, V
DS
= 0V
-
-
±
100
nA
Zero to Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
-
-
1.0
μ
A
-
-
25
μ
A
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 2A, V
GS
= 5V
-
-
2.1
V
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 2A, V
GS
= 5V, (Figures 6, 7)
-
-
1.050
Turn-On Delay Time
t
d(ON)
I
D
= 2A, V
DD
= 50V, R
G
= 6.25
,
R
L
= 25
, V
GS
= 5V
(Figures 10, 11, 12)
-
10
25
ns
Rise Time
t
r
-
15
45
ns
Turn-Off Delay Time
t
d(OFF)
-
25
45
ns
Fall Time
t
f
-
20
25
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 9)
-
-
200
pF
Output Capacitance
C
OSS
-
-
80
pF
Reverse Transfer Capacitance
C
RSS
-
-
35
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 2A
-
-
1.4
V
Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 50A/
μ
s
-
100
-
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP2N08L, RFP2N10L
相關(guān)PDF資料
PDF描述
RFP2N10L 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
RFP2N08 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
RFP2N12L 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
RFP2N12 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP2N10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RFP2N1093 制造商:Harris Corporation 功能描述:
RFP2N10L 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP2N12 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
RFP2N12L 制造商:Harris Corporation 功能描述:
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