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參數(shù)資料
| 型號(hào)： | RFP2N08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 2 A, 80 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | RFP2N08 |
5-1
Semiconductor
Features
2A, 80V and 100V
r
DS(ON)
1.05
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Majority Carrier Device
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-channel enhancement mode silicon gate power
field effect transistors designed for applications such as
switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09282.
Symbol
Packaging
JEDEC TO-220AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N08
TO-220AB
RFP2N08
RFP2N10
TO-220AB
RFP2N10
NOTE: When ordering, use entire part number.
D
G
S
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
Harris Corporation 1998
RFP2N08,
RFP2N10
2A, 80V and 100V, 1.05 Ohm,
N-Channel Power MOSFETs
File Number
2883.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP2N10 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| RFP2N12 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N15 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N20L | 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP2N08L | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP2N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N1093 | 制造商:Harris Corporation 功能描述: |
| RFP2N10L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP2N12 | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
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