參數(shù)資料
型號： RFP2N08
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
中文描述： 2 A, 80 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/4頁
文件大?。?/td> 46K
代理商： RFP2N08
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP2N08
80
80
2
5
±
20
25
0.2
-55 to 150
RFP2N10
100
100
2
5
±
20
25
0.2
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 1M
) (Note 1). . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFP2N10
BV
DSS
ID = 250
μ
A, VGS = 0
100
-
-
V
RFP2N08
80
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
V
DS
= Rated BV
DSS
, T
C
= 25
o
C
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 125
o
C
2
-
4
V
Zero-Gate Voltage Drain Current
I
DSS
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V, V
DS
= 0
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 2A, V
GS
= 10V (Figures 6, 7)
-
-
1.05
Drain to Source On Voltage (Note 2)
V
DS(ON)
I
D
= 2A, V
GS
= 10V
-
-
2.1
V
Turn-On Delay Time
t
d(ON)
I
D
≈
1A, V
DD
= 50V, R
G
= 50
,
R
L
= 25
, V
GS
= 10V
(Figures 10, 11, 12)
-
17
25
ns
Rise Time
t
r
-
30
45
ns
Turn-Off Delay Time
t
d(OFF)
-
30
45
ns
Fall Time
t
f
-
17
25
ns
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f =1MHz
(Figure 9)
-
-
200
pF
Output Capacitance
C
OSS
-
-
80
pF
Reverse-Transfer Capacitance
C
RSS
-
-
25
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 2A
-
1.4
V
Diode Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 50A/
μ
s
-
100
-
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP2N08, RFP2N10
相關(guān)PDF資料
PDF描述
RFP2N10 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
RFP2N12L 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管)
RFP2N12 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
RFP2N15 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
RFP2N20L 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP2N08L 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
RFP2N10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RFP2N1093 制造商:Harris Corporation 功能描述:
RFP2N10L 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP2N12 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
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