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參數資料
| 型號： | RFP2N08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 2 A, 80 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 46K |
| 代理商： | RFP2N08 |
5-3
Typical Performance Curves
Unless otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
T
C,
CASE TEMPERATURE (
o
C)
1.2
P
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
RFP2N08
RFP2N010
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
0.10
0.01
1
10
100
1000
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
T
J
= MAX RATED
T
C
= 25
C
PULSE DURATION = 80
μ
s
T
C
= 25
o
C
I
D
,
V
GS
= 20V
V
GS
= 10V
2.5
2.0
1A
0
1
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3
4
5
6
7
8
9
10
V
GS
= 9V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
1.5
T
C
= 25
o
C
T
C
= -40
o
C
T
C
= 125
o
C
6
2.0
2.5
1.0
0.5
I
D
,
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
8
V
DS
= 10V
PULSE DURATION = 250
μ
s
T
C
= 25
o
C
T
C
= 40
o
C
T
C
= 125
o
C
10
T
C
= 125
o
C
V
GS
= 10V
PULSE DURATION = 250
μ
s
T
C
= 25
o
C
T
C
= -40
o
C
0
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, DRAIN CURRENT (A)
r
D
,
R
)
RFP2N08, RFP2N10
相關PDF資料 |
PDF描述 |
|---|---|
| RFP2N10 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場效應管) |
| RFP2N12 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N15 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N20L | 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFP2N08L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP2N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N1093 | 制造商:Harris Corporation 功能描述: |
| RFP2N10L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP2N12 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
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