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參數(shù)資料
| 型號： | RFP2N08 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 2 A, 80 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 46K |
| 代理商： | RFP2N08 |
5-4
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless otherwise Specified
(Continued)
N
2.0
T
J
, JUNCTION TEMPERATURE (
o
C)
O
1.5
1.0
0.5
0
-50
0
50
100
150
200
I
D
= 2A, V
GS
= 10V
1.4
1.2
1.0
0.8
0.6
-50
0
T
J
, JUNCTION TEMPERATURE (
o
C)
50
100
150
200
V
GS
= V
DS
, I
D
= 250
μ
A
N
V
240
200
160
120
80
40
0
10
20
30
40
50
60
70
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
0
100
75
50
V
D
,
25
0
I
G(REF)
I
G(ACT)
TIME (
μ
s)
V
G
,
6
8
10
4
2
0
20
I
G(REF)
I
G(ACT)
80
GATE
TO
SOURCE
VOLTAGE
R
L
= 50
I
G(REF)
= 0.095mA
V
GS
= 10V
0.75 V
DSS
0.50 V
DSS
0.25 V
DSS
V
DSS
= V
DSS
0.75 V
DSS
0.50 V
DSS
0.25 V
DSS
BV
DSS
V
DDD =
V
DSS
Test Circuits and Waveforms
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP2N08, RFP2N10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP2N10 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場效應管) |
| RFP2N12 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N15 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N20L | 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP2N08L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP2N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N1093 | 制造商:Harris Corporation 功能描述: |
| RFP2N10L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP2N12 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
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