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參數(shù)資料
| 型號(hào)： | RFP2N08L |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 2A, 80V, 0.140 Ohm, Logic Level,N-Channel Power MOSFET(2A, 80V, 0.140 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 2 A, 80 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | RFP2N08L |
6-250
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
2.5
1.5
1.0
0.5
2.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.01
10
1
I
D
,
10
2
1
RFP2N10L
0.1
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
T
J
= MAX RATED, T
C
= 25
o
C
RFP2N08L
10
3
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
4
6
10
2
5
7
3
8
6
4
2
8
1
0
1
3
5
7
9
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 4.0V
V
GS
= 10V
V
GS
= 5.0V
V
GS
= 2.0V
V
GS
= 3.0V
1
3
4
6
2
4
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
2
8
5
3
1
5
V
DS
= 15V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
7
T
C
= -40V
T
C
= 25V
T
C
= 125V
T
C
= -40V
T
C
= 125V
2
I
D,
DRAIN CURRENT (A)
1
0
2
0
1.5
r
D
,
1
0.5
3
4
T
C
= -40V
10
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
5
6
7
8
9
T
C
= 25V
T
C
= 125V
O
)
RFP2N08L, RFP2N10L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP2N10L | 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N10 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 2A, 120V, 1.750 Ohm, Logic Level,N-Channel Power MOSFET(2A, 120V,1.750 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| RFP2N12 | 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP2N10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP2N1093 | 制造商:Harris Corporation 功能描述: |
| RFP2N10L | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP2N12 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs |
| RFP2N12L | 制造商:Harris Corporation 功能描述: |
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