參數(shù)資料
型號(hào): RD38F1010C0ZTL0
廠商: INTEL CORP
元件分類: 存儲(chǔ)器
英文描述: 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁(yè)數(shù): 11/70頁(yè)
文件大?。?/td> 1223K
代理商: RD38F1010C0ZTL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
11
2.0
PrinciplesofOperation
TheflashmemoryutilizesaCUIandautomatedalgorithmstosimplifyprogramanderase
operations.TheWSMautomatesprogramanderaseoperationsbyhandlingdataandaddress
latches,WE#,andsystemstatusrequests.
.
2.1
BusOperation
AllbuscyclestoorfromtheStacked-CSPconformtostandardmicrocontrollerbuscycles.Four
controlsignalsdictatethedataflowinandoutoftheflashcomponent:F-CE#,F-OE#,F-WE#and
F-RP#.FourseparatecontrolsignalshandlethedataflowinandoutoftheSRAMcomponent:
S-CS1#,S-CS2,S-OE#,andS-WE#.Thesebusoperationsaresummarizedin
Table2
and
Table3
.
2.1.1
Read
Theflashmemoryhasfourreadmodes:readarray,readidentifier,readstatusandCFIquery.These
flashmemoryreadmodesarenotdependentontheF-V
PP
voltage.Uponinitialdevicepower
-
upor
afterexitfromreset,theflashdeviceautomaticallydefaultstoreadarraymode.F-CE#andF-OE#
mustbeassertedtoobtaindatafromtheflashcomponent.
TheSRAMhasonereadmodeavailable.S-CS1#,S-CS2,andS-OE#mustbeassertedtoobtain
datafromtheSRAMdevice.See
Table 3,“3VoltIntelAdvanced+BootBlockFlashMemory
Stacked-CSPBusOperations”onpage 12
forasummaryofoperations.
Figure2. 3VoltIntel
Advanced+BootBlockStackedChipScalePackageBlockDiagram
F-VCC
F-OE#
F-CE#
F-WP#
A[Max:0]
2-,4-or8-Mbit
SRAM
28F160C3
or
28F320C3
Flash
S-VCC
S-CS1
S-CS2
S-OE#
F-VCCQ
S-WE#
S-UB#
S-LB#
F-VPP
F-WE#
F-VSS
S-VSS
D[15:0]
F-RP#
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