參數(shù)資料
型號: RD28F6408W30T70
廠商: INTEL CORP
元件分類: 存儲器
英文描述: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA80
封裝: 14 X 8 MM, 0.80 MM PITCH, STACK, CSP-80
文件頁數(shù): 13/82頁
文件大?。?/td> 749K
代理商: RD28F6408W30T70
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
7
A 32-Mbit device will have eight partitions; a 64-Mbit device will have 16 partitions; a
128-Mbit device will have 32 partitions. Each main block is 32-Kword in size.
The 1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O supports CPUs that boot from either the
top or bottom of the flash memory map. A top parameter flash device has the highest addressable
32-Kword block divided into eight smaller blocks. Conversely, a bottom parameter flash device has
the lowest addressable 32-Kword block divided into eight smaller blocks. Each of these eight 4-
Kword blocks are called parameter blocks. Parameter blocks are useful for frequently stored data
variables. Their smaller block size allows them to erase faster than main blocks. Page- and burst-
mode reads are also permitted in all blocks and across all partition boundaries.
It should be mentioned that the SRAM does not adhere to this multi-partition architecture. The
SRAM memory is organized as a single memory array.
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