參數(shù)資料
型號： RD28F3204C3B70
廠商： INTEL CORP
元件分類： 存儲器
英文描述： TVS BIDIRECT 400W 18V SMA
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù)： 7/70頁
文件大小： 1223K
代理商： RD28F3204C3B70
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
7
1.0
Introduction
Thisdocumentcontainsthespecificationsforthe3 VoltIntel
Advanced+BootBlockFlash
Memory(C3)Stacked-ChipScalePackage(Stacked-CSP)device.Stackedmemorysolutionsare
offeredinthefollowingcombinations:32-Mbitflash+8-MbitSRAM,32-Mbitflash+4-Mbit
SRAM,16-Mbitflash+4-MbitSRAM,or16-Mbitflashmemory+2-MbitSRAM.
1.1
DocumentConventions
Throughoutthisdocument,thefollowingconventionshavebeenadopted.
Voltages:
“2.7V”referstothefullvoltagerange,2.7V–3.3V;12Vrefersto11.4Vto12.6V
Mainblock(s)
:32-Kwordblock
Parameterblock(s)
:4-Kwordblock
1.2
ProductOverview
TheC3Stacked-CSPdevicecombinesflashandSRAMintoasinglepackage,andprovidessecure
low-voltagememorysolutionsforportableapplications.Thismemoryfamilycombinestwo
memorytechnologies,flashmemoryandSRAM,inonepackage.Theflashmemorydelivers
enhancedsecurityfeatures,ablocklockingcapabilitythatallowsinstantlocking/unlockingofany
flashblockwithzero-latency,anda128-bitprotectionregisterthatenableuniquedevice
identification,tomeettheneedsofnextgenerationportableapplications.Improved12 V
productionprogrammingcanbeusedtoimprovefactorythroughput.
Theflashmemoryisasymmetrically-blockedtoenablesystemintegrationofcodeanddatastorage
inasingledevice.Eachflashblockcanbeerasedindependentlyoftheothersupto100,000times.
Theflashhaseight8-KBparameterblockslocatedateitherthetop(denotedby-Tsuffix)orthe
bottom(-Bsuffix)oftheaddressmapinordertoaccommodatedifferentmicroprocessorprotocols
forkernelcodelocation.Theremainingflashmemoryisgroupedinto32-Kwordmainblocks.Any
individualflashblockcanbelockedorunlockedinstantlytoprovidecompleteprotectionforcode
ordata(see
Section5.7,“FlashEraseandProgramTimings(1)”onpage 31
fordetails).
TheflashcontainsbothaCommandUserInterface(CUI)andaWriteStateMachine(WSM).The
CUIservesastheinterfacebetweenthemicrocontrollerandtheinternaloperationoftheflash
memory.TheinternalWSMautomaticallyexecutesthealgorithmsandtimingsnecessaryfor
Table1. BlockOrganization(x16)
MemoryDevice
Kwords
32-MbitFlash
2048
16-MbitFlash
1024
2-MbitSRAM
128
4-MbitSRAM
256
8-MbitSRAM
512
NOTE:
Allwordsare16bitseach.
相關PDF資料
PDF描述
RD28F1602C3B70 TVS 400W 20V UNIDIRECT SMA
RD28F1604C3B90 TVS UNI-DIR 9.0V 400W SMA
RD28F1602C3B90 TVS UNIDIRECT 400W 90V SMA
RD28F3208C3B90 TVS BIDIRECT 400W 90V SMA
RD28F3208C3T70 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
相關代理商/技術參數(shù)
參數(shù)描述
RD28F3204C3T70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F3204W30B70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30B85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
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