參數(shù)資料
型號： RD28F3204C3B70
廠商： INTEL CORP
元件分類： 存儲器
英文描述： TVS BIDIRECT 400W 18V SMA
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù)： 16/70頁
文件大?。?/td> 1223K
代理商： RD28F3204C3B70
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
16
Datasheet
commandiswrittentotheflashmemory,theWSMwillcontinuewiththeprogrammingprocess
andstatusregisterbitsSR.2andSR.7willautomaticallybecleared.Thedeviceautomatically
outputsstatusregisterdatawhenread(seeAppendixA,
ProgramSuspend/ResumeFlowchart
s)
aftertheProgramResumecommandiswritten.F-V
PP
mustremainatthesameF-V
PP
levelused
forprogramwhileinprogramsuspendmode.F-RP#mustalsoremainatV
IH
.
3.6
BlockErase(20h)
Toeraseablock,writetheEraseSet
-
upandEraseConfirmcommandstotheCUI,alongwithan
addressidentifyingtheblocktobeerased.ThisaddressislatchedinternallywhentheErase
Confirmcommandisissued.Blockerasureresultsinallbitswithintheblockbeingsetto“1.”O(jiān)nly
oneblockcanbeerasedatatime.TheWSMwillexecuteasequenceofinternallytimedeventsto
programallbitswithintheblockto“0,”eraseallbitswithintheblockto“1,”thenverifythatall
bitswithintheblockaresufficientlyerased.Whiletheeraseexecutes,statusbit7isa“0.”
Whenthestatusregisterindicatesthaterasureiscomplete,checktheerasestatusbittoverifythat
theeraseoperationwassuccessful.IftheEraseoperationwasunsuccessful,SR.5ofthestatus
registerwillbesettoa“1,”indicatinganerasefailure.IfF-V
PP
wasnotwithinacceptablelimits
aftertheEraseConfirmcommandwasissued,theWSMwillnotexecutetheerasesequence;
instead,SR.5ofthestatusregisterissettoindicateaneraseerror,andSR.3issettoa“1”to
identifythatF-V
PP
supplyvoltagewasnotwithinacceptablelimits.
Afteraneraseoperation,clearthestatusregister(50h)beforeattemptingthenextoperation.Any
CUIinstructioncanfollowaftererasureiscompleted;however,topreventinadvertentstatus
registerreads,itisadvisabletoplacetheflashinreadarraymodeaftertheeraseiscomplete.
3.6.1
SuspendingandResumingErase(B0h/D0h)
Aneraseoperationcantakeseveralsecondstocomplete,therefore,theEraseSuspendcommandis
providedtoallowerase
-
sequenceinterruptioninordertoreaddatafrom,orprogramdatato,
anotherblockinmemory.Onceanerasesequencehasstarted,writingtheEraseSuspendcommand
totheCUIcausesthedevicetosuspendtheerasesequenceatapredeterminedpointintheerase
algorithm.BlockeraseissuspendedwhenStatusRegisterbitsSR[7,6]areset.Suspendlatencyis
specifiedinSection5.7,“FlashEraseandProgramTimings”onpage31.
Whenaneraseoperationhasbeensuspended,aWordProgramorReadoperationcanbeperformed
withinanyblock,excepttheblockthatisinanerasesuspendstate.Aneraseoperationcannotbe
nestedwithinanothererasesuspendoperation.
Asuspendederaseoperationcannotresumeuntilthenestedprogramoperationhascompleted.
ReadArray,ReadStatusRegister,ClearStatusRegister,ReadIdentifier,CFIQuery,Erase
Resume,areallvalidcommandsduringEraseSuspend.Additionally,Program,ProgramSuspend,
ProgramResume,LockBlock,UnlockBlockandLock-DownBlockarevalidcommandsduring
EraseSuspend.
Toresumeanerasesuspendoperation,issuetheResumecommand.TheResumecommandcanbe
writtentoanydeviceaddress.WhenaprogramoperationisnestedwithinanEraseSuspend
operationandtheProgramSuspendcommandisissued,thedevicewillsuspendtheprogram
operation.Whentheresumecommandisissued,thedevicewillresumetheprogramoperation
first.Oncethenestedprogramoperationiscompleted,anadditionalResumecommandisrequired
tocompletetheblockoperation.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD28F3204C3T70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F3204W30B70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30B85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
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