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參數(shù)資料
| 型號： | RC28F128P33T85 |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 3V PROM, 85 ns, PBGA64 |
| 封裝： | BGA-64 |
| 文件頁數(shù)： | 83/96頁 |
| 文件大?。?/td> | 1378K |
| 代理商： | RC28F128P33T85 |
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Numonyx StrataFlash Embedded Memory (P33)
Datasheet
November 2007
84
Order Number: 314749-05
Table 44: Partition Region 1 Information (Sheet 2 of 2)
Offset
(1)
See table below
P = 10Ah
Description
Address
Bottom
Top
(Optional flash features and commands)
Len
Bot
Top
(P+2C)h (P+2C)h Partition Region 1 Erase Block Type 1 Information
4
136:
(P+2D)h (P+2D)h
bits 0–15 = y, y+1 = # identical-size erase blks in a partition
137:
(P+2E)h (P+2E)h
bits 16–31 = z, region erase block(s) size are z x 256 bytes
138:
(P+2F)h (P+2F)h
139:
(P+30)h
(P+30)h Partition 1 (Erase Block Type 1)
213A:
13A:
(P+31)h
Block erase cycles x 1000
13B:
(P+32)h
1
13C:
(P+33)h
1
13D:
Partition Region 1 (Erase Block Type 1) Programming Region Information
6
(P+34)h
bits 0–7 = x, 2^x = Programming Region aligned size (bytes)
13E:
(P+35)h
bits 8–14 = Reserved; bit 15 = Legacy flash operation (ignore 0:7)
13F:
(P+36)h
bits 16–23 = y = Control Mode valid size in bytes
140:
(P+37)h
bits 24-31 = Reserved
141:
(P+38)h
bits 32-39 = z = Control Mode invalid size in bytes
142:
(P+39)h
bits 40-46 = Reserved; bit 47 = Legacy flash operation (ignore 23:16 & 39:32)
143:
(P+3A)h (P+3A)h Partition Region 1 Erase Block Type 2 Information
4
144:
(P+3B)h (P+3B)h
bits 0–15 = y, y+1 = # identical-size erase blks in a partition
145:
(P+3C)h (P+3C)h
bits 16–31 = z, region erase block(s) size are z x 256 bytes
146:
(P+3D)h (P+3D)h
147:
(P+3E)h (P+3E)h Partition 1 (Erase Block Type 2)
2
148:
(P+3F)h (P+3F)h
Block erase cycles x 1000
149:
(P+40)h
114A:
14A:
(P+41)h
114B:
14B:
Partition Region 1 (Erase Block Type 2) Programming Region Information
6
(P+42)h
bits 0–7 = x, 2^x = Programming Region aligned size (bytes)
14C:
(P+43)h
bits 8–14 = Reserved; bit 15 = Legacy flash operation (ignore 0:7)
14D:
(P+44)h
bits 16–23 = y = Control Mode valid size in bytes
14E:
(P+45)h
bits 24-31 = Reserved
14F:
(P+46)h
bits 32-39 = z = Control Mode invalid size in bytes
150:
(P+47)h
bits 40-46 = Reserved; bit 47 = Legacy flash operation (ignore 23:16 & 39:32)
151:
Partition 1 (erase block Type 1) page mode and synchronous mode capabilities
defined in Table 10.
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
Partition 1 (erase block Type 1) bits per cell; internal EDAC
bits 0–3 = bits per cell in erase region
bit 4 = internal EDAC used (1=yes, 0=no)
bits 5–7 = reserve for future use
Partition 1 (erase block Type 2) bits per cell; internal EDAC
bits 0–3 = bits per cell in erase region
bit 4 = internal EDAC used (1=yes, 0=no)
bits 5–7 = reserve for future use
Partition 1 (erase block Type 2) page mode and synchronous mode capabilities
defined in Table 10.
bit 0 = page-mode host reads permitted (1=yes, 0=no)
bit 1 = synchronous host reads permitted (1=yes, 0=no)
bit 2 = synchronous host writes permitted (1=yes, 0=no)
bits 3–7 = reserved for future use
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RC28F128P33T85A | 功能描述:IC FLASH 128MBIT 85NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
| RC28F128P33TF60 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx?? P33-65nm Flash Memory |
| RC28F128P33TF60A | 功能描述:IC FLASH 128MBIT 85NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x20） 包裝:托盤 |
| RC28F128P3GB850 | 制造商:Micron Technology Inc 功能描述:128MB, KEARNY EBGA 3.0 - Trays |
| RC28F128P3GT850 | 制造商:Micron Technology Inc 功能描述:128MB, KEARNY EBGA 3.0 - Trays |
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