參數(shù)資料
型號: RC28F128P33T85
廠商: NUMONYX
元件分類: PROM
英文描述: 8M X 16 FLASH 3V PROM, 85 ns, PBGA64
封裝: BGA-64
文件頁數(shù): 19/96頁
文件大小: 1378K
代理商: RC28F128P33T85
Numonyx StrataFlash Embedded Memory (P33)
Datasheet
November 2007
26
Order Number: 314749-05
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the Absolute Maximum Ratings may cause permanent
damage. These are stress ratings only.
5.2
Operating Conditions
Note:
Operation beyond the Operating Conditions is not recommended and extended
exposure beyond the Operating Conditions may affect device reliability.
Table 11: Absolute Maximum Ratings
Parameter
Maximum Rating
Notes
Temperature under bias
–40 °C to +85 °C
-
Storage temperature
–65 °C to +125 °C
-
Voltage on any signal (except VCC, VPP and VCCQ)
–0.5 V to +4.1 V
1
VPP voltage
–0.2 V to +10 V
1,2,3
VCC voltage
–0.2 V to +4.1 V
1
VCCQ voltage
–0.2 V to +4.1 V
1
Output short circuit current
100 mA
4
Notes:
1.
Voltages shown are specified with respect to VSS. Minimum DC voltage is –0.5 V on input/output signals and –0.2 V on
VCC, VCCQ, and VPP. During transitions, this level may undershoot to –2.0 V for periods less than 20 ns. Maximum DC
voltage on VCC is VCC + 0.5 V, which, during transitions, may overshoot to VCC + 2.0 V for periods less than 20 ns.
Maximum DC voltage on input/output signals and VCCQ is VCCQ + 0.5 V, which, during transitions, may overshoot to
VCCQ + 2.0 V for periods less than 20 ns.
2.
Maximum DC voltage on VPP may overshoot to +11.5 V for periods less than 20 ns.
3.
Program/erase voltage is typically 2.3 V – 3.6 V. 9.0 V can be applied for 80 hours maximum total, to any blocks for
1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling capability.
4.
Output shorted for no more than one second. No more than one output shorted at a time.
Table 12: Operating Conditions
Symbol
Parameter
Min
Max
Units
Notes
TC
Operating Temperature
–40
+85
°C
1
VCC
VCC Supply Voltage
2.3
3.6
V
-
VCCQ
I/O Supply Voltage
CMOS inputs
2.3
3.6
3
TTL inputs
2.4
3.6
VPPL
VPP Voltage Supply (Logic Level)
1.5
3.6
2
VPPH
Factory Word Programming VPP
8.5
9.5
tPPH
Maximum VPP Hours
VPP = VPPH
-80
Hours
Block
Erase
Cycles
Main and Parameter Blocks
VPP = VPPL
100,000
-
Cycles
Main Blocks
VPP = VPPH
-
1000
Parameter Blocks
VPP = VPPH
-
2500
Notes:
1.
TC = Case Temperature.
2.
In typical operation VPP program voltage is VPPL.
3.
40Mhz burst operation on the TSOP package has a max Vccq value of 3.5V. Please refer to the latest Specification Update
regarding synchronous burst operation with the TSOP package.
相關(guān)PDF資料
PDF描述
RC28F256P33T85A 16M X 16 FLASH 3V PROM, 85 ns, PBGA64
RC28F160C3TC90 1M X 16 FLASH 3V PROM, 90 ns, PBGA64
RC28F160C3BD70 1M X 16 FLASH 3V PROM, 70 ns, PBGA64
RC4194K DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9
RM4194K DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RC28F128P33T85A 功能描述:IC FLASH 128MBIT 85NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(單線) 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
RC28F128P33TF60 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx?? P33-65nm Flash Memory
RC28F128P33TF60A 功能描述:IC FLASH 128MBIT 85NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M(256K x 18) 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x20) 包裝:托盤
RC28F128P3GB850 制造商:Micron Technology Inc 功能描述:128MB, KEARNY EBGA 3.0 - Trays
RC28F128P3GT850 制造商:Micron Technology Inc 功能描述:128MB, KEARNY EBGA 3.0 - Trays