參數資料
型號： R5F56218BDLE#U0
廠商： Renesas Electronics America
文件頁數： 114/148頁
文件大?。?/td> 0K
描述： MCU 32BIT FLASH 512KROM 145TFLGA
產品培訓模塊： RX Compare Match Timer
RX DMAC
標準包裝： 1
系列： RX600
核心處理器： RX
芯體尺寸： 32-位
速度： 100MHz
連通性： CAN，EBI/EMI，I²C，SCI，SPI，USB
外圍設備： DMA，LVD，POR，PWM，WDT
輸入/輸出數： 103
程序存儲器容量： 512KB（512K x 8）
程序存儲器類型： 閃存
RAM 容量： 96K x 8
電壓 - 電源 (Vcc/Vdd)： 2.7 V ~ 3.6 V
數據轉換器： A/D 8x10/12b，D/A 2x10b
振蕩器型： 內部
工作溫度： -40°C ~ 85°C
封裝/外殼： 145-TFLGA
包裝： 托盤
PIC18F6520/8520/6620/8620/6720/8720
DS39609B-page 66
2004 Microchip Technology Inc.
5.4
Erasing Flash Program Memory
The minimum erase block is 32 words or 64 bytes. Only
through the use of an external programmer, or through
ICSP control, can larger blocks of program memory be
bulk erased. Word erase in the Flash array is not
supported.
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased.
TBLPTR<5:0> are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash pro-
gram memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
operation.
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
5.4.1
FLASH PROGRAM MEMORY
ERASE SEQUENCE
The sequence of events for erasing a block of internal
program memory location is:
1.
Load Table Pointer with address of row being
erased.
2.
Set the EECON1 register for the erase
operation:
set EEPGD bit to point to program memory;
clear the CFGS bit to access program
memory;
set WREN bit to enable writes;
set FREE bit to enable the erase.
3.
Disable interrupts.
4.
Write 55h to EECON2.
5.
Write AAh to EECON2.
6.
Set the WR bit. This will begin the row erase
cycle.
7.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
8.
Execute a NOP.
9.
Re-enable interrupts.
EXAMPLE 5-2:
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
CODE_ADDR_UPPER
; load TBLPTR with the base
MOVWF
TBLPTRU
; address of the memory block
MOVLW
CODE_ADDR_HIGH
MOVWF
TBLPTRH
MOVLW
CODE_ADDR_LOW
MOVWF
TBLPTRL
ERASE_ROW
BSF
EECON1, EEPGD
; point to Flash program memory
BCF
EECON1, CFGS
; access Flash program memory
BSF
EECON1, WREN
; enable write to memory
BSF
EECON1, FREE
; enable Row Erase operation
BCF
INTCON, GIE
; disable interrupts
MOVLW
55h
MOVWF
EECON2
; write 55H
Required
MOVLW
AAh
Sequence
MOVWF
EECON2
; write AAH
BSF
EECON1, WR
; start erase (CPU stall)
NOP
BSF
INTCON, GIE
; re-enable interrupts
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