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MPC5604B/C Microcontroller Data Sheet, Rev. 11.1
Package pinouts and signal descriptions
Freescale Semiconductor
56
3.19
Flash memory electrical characteristics
3.19.1
Program/Erase characteristics
Table 28 shows the program and erase characteristics.
6 Data Flash Power Down. Code Flash in Low Power. SIRC (128 kHz) and FIRC (16 MHz) on. 10 MHz XTAL clock.
FlexCAN: instances: 0, 1, 2 ON (clocked but not reception or transmission), instances: 4, 5, 6 clock gated. LINFlex:
instances: 0, 1, 2 ON (clocked but not reception or transmission), instance: 3 clock gated. eMIOS: instance: 0 ON (16
channels on PA[0]–PA[11] and PC[12]–PC[15]) with PWM 20 kHz, instance: 1 clock gated. DSPI: instance: 0 (clocked
but no communication). RTC/API ON. PIT ON. STM ON. ADC ON but not conversion except 2 analog watchdog.
7 Only for the “P” classification: No clock, FIRC (16 MHz) off, SIRC (128 kHz) on, PLL off, HPvreg off,
ULPVreg/LPVreg on. All possible peripherals off and clock gated. Flash in power down mode.
8 When going from RUN to STOP mode and the core consumption is > 6 mA, it is normal operation for the main
regulator module to be kept on by the on-chip current monitoring circuit. This is most likely to occur with junction
temperatures exceeding 125 °C and under these circumstances, it is possible for the current to initially exceed the
maximum STOP specification by up to 2 mA. After entering stop, the application junction temperature will reduce to
the ambient level and the main regulator will be automatically switched off when the load current is below 6 mA.
9 Only for the “P” classification: ULPreg on, HP/LPVreg off, 32 KB RAM on, device configured for minimum
consumption, all possible modules switched off.
10 ULPreg on, HP/LPVreg off, 8 KB RAM on, device configured for minimum consumption, all possible modules
switched off.
Table 28. Program and erase specifications
Symbol
C
Parameter
Value
Unit
Min
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Tdwprogram CC C Double word (64 bits) program time4
4 Actual hardware programming times. This does not include software overhead.
—22
50
500
s
T16Kpperase
16 KB block preprogram and erase time
—
300
500
5000
ms
T32Kpperase
32 KB block preprogram and erase time
—
400
600
5000
ms
T128Kpperase
128 KB block preprogram and erase time
—
800
1300
7500
ms
Tesus
CC D Erase suspend latency
—
30
s