參數(shù)資料
型號: PDM41258SA7SO
元件分類: SRAM
英文描述: 64K X 4 STANDARD SRAM, 7 ns, PDSO24
文件頁數(shù): 7/8頁
文件大小: 353K
代理商: PDM41258SA7SO
PDM41258
Rev. 2.2 - 4/27/98
7
1
2
3
4
5
6
7
8
9
10
11
12
Low VCC Data Retention Waveform
Data Retention Electrical Characteristics (LA Version Only)
NOTES: (For three previous Electrical Characteristics tables)
1. The device is continuously selected. Chip Enable is held in its active state.
2. The address is valid prior to or coincident with the latest occuring Chip Enable.
3. At any given temperature and voltage condition, tHZCE is less than tLZCE.
4. This parameter is sampled.
5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured
±200 mV from steady state voltage.
6. VCC = 5V ± 5%.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VDR
VCC for Retention Data
2—
V
ICCDR
Data Retention Current
CE
≥ V
CC – 0.2V
VIN ≥ VCC – 0.2V
or
≤ 0.2V
VCC = 2V
95
500
A
VCC = 3V
350
750
A
tCDR
Chip Deselect to Data Retention Time
0
ns
tR
(4)
Operation Recovery Time
tRC
——
ns
DON'T CARE
VCC
V
IH
IL
t CDR
V
t R
4.5V
Data Retention Mode
CE
DR
VDR
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