參數(shù)資料
型號(hào)： PA28F400BVT80
廠商： INTEL CORP
元件分類： PROM
英文描述： 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 256K X 16 FLASH 5V PROM, PDSO44
封裝： 1.110 X 0.525 INCH, PLASTIC, SOP-44
文件頁(yè)數(shù)： 32/50頁(yè)
文件大?。?/td> 559K
代理商： PA28F400BVT80
28F400BX-T/B, 28F004BX-T/B
DC CHARACTERISTICS
(Continued)
Symbol
Parameter
Notes
Min
Typ Max Unit
Test Conditions
V
OH1
Output High Voltage (TTL)
2.4
V
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
OH2
Output High Voltage (CMOS)
0.85 V
CC
V
V
CC
b
0.4
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Erase/Write Operations
7
11.4
12.0 12.6
V
V
PPH
V
PP
during Erase/Write Operations
8
10.8
12.0 13.2
V
V
LKO
V
CC
Erase/Write Lock Voltage
RP
Y
Unlock Voltage
2.0
V
V
HH
11.5
13.0
V
Boot Block Write/Erase
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the device is read while in Erase Suspend Mode, current draw is the sum
of I
CCES
and I
CCR
.
3. Block Erases and Word/Byte Writes are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and
V
PPL
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA typical in static operation.
6. CMOS Inputs are either V
CC
g
0.2V or GND
g
0.2V. TTL Inputs are either V
IL
or V
IH
.
7. V
PP
e
12.0V
g
5% for applications requiring 100,000 block erase cycles.
8. V
PP
e
12.0V
g
10% for applications requiring wider V
PP
tolerances at 100 block erase cycles.
9. For the 28F004BX address pin A
10
follows the C
OUT
capacitance numbers.
10. I
CCR
typical is 20 mA for X16 Active Read Current.
EXTENDED TEMPERATURE OPERATING CONDITIONS
Symbol
Parameter
Notes
Min
Max
Unit
§
C
T
A
Operating Temperature
b
40
85
V
CC
V
CC
Supply Voltage (10%)
5
4.50
5.50
V
DC CHARACTERISTICS: EXTENDED TEMPERATURE OPERATION
Symbol
Parameter
Notes Min Typ
Max
Unit
Test Conditions
I
LI
Input Load Current
1
g
1.0
m
A
V
CC
e
V
CC
Max
V
IN
e
V
CC
or GND
V
CC
e
V
CC
Max
V
OUT
e
V
CC
or GND
V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
IH
RP
Y
V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
CC
g
0.2V
28F400BX:
BYTE
Y
e
V
CC
g
0.2V or GND
RP
Y
e
GND
g
0.2V
I
LO
Output Leakage Current
1
g
10
m
A
I
CCS
V
CC
Standby Current
1, 3
1.5
mA
100
m
A
I
CCD
V
CC
Deep Power-Down Current
1
0.20
20
m
A
32
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PDF描述
PA28F400BX-T60 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PA28F400BV-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F400BX-B120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
PA28F400BX-B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
PA28F400BX-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
PA28F400BX-T120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
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