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參數(shù)資料
| 型號(hào)： | PA28F400BVT80 |
| 廠商： | INTEL CORP |
| 元件分類(lèi)： | PROM |
| 英文描述： | 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 256K X 16 FLASH 5V PROM, PDSO44 |
| 封裝： | 1.110 X 0.525 INCH, PLASTIC, SOP-44 |
| 文件頁(yè)數(shù)： | 28/50頁(yè) |
| 文件大?。?/td> | 559K |
| 代理商： | PA28F400BVT80 |
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28F400BX-T/B, 28F004BX-T/B
290451–12
Bus
Command
Comments
Operation
Write
Erase
Suspend
Data
e
B0H
Read
Status Register Data.
Toggle OE
Y
or CE
Y
to
update Status Register
Standby
Check SR.7
1
e
Ready
Standby
Check SR.6
1
e
Suspended
Write
Read Array
Data
e
FFH
Read
Read array data from block
other than that being
erased.
Write
Erase Resume
Data
e
D0H
Figure 15. Erase Suspend/Resume Flowchart
4.5 Power Consumption
4.5.1 ACTIVE POWER
With CE
Y
at a logic-low level and RP
Y
at a logic-
high level, the device is placed in the active mode.
The device I
CC
current is a maximum 60 mA at
10 MHz with TTL input signals.
4.5.2 AUTOMATIC POWER SAVINGS
Automatic Power Savings (APS) is a low pwer fea-
ture during active mode of operation. The 4-Mbit
family of products incorporate Power Reduction
Control (PRC) circuitry which basically allows the de-
vice to put itself into a low current state when it is
not being accessed. After data is read from the
memory array, PRC logic controls the device’s pow-
er consumption by entering the APS mode where
maximum I
CC
current is 3 mA and typical I
CC
current
is 1 mA. The device stays in this static state with
outputs valid until a new location is read.
4.5.3 STANDBY POWER
With CE
Y
at a logic-high level (V
IH
), and the CUI in
read mode, the memory is placed in standby mode
where the maximum I
CC
standby current is 100
m
A
with CMOS input signals. The standby operation dis-
ables much of the device’s circuitry and substantially
reduces device power consumption. The outputs
(DQ
[
0:15
]
or DQ
[
0:7
]
) are placed in a high-imped-
ance state independent of the status of the OE
Y
signal. When the 4-Mbit boot block flash family is
deselected during erase or program functions, the
devices will continue to perform the erase or pro-
gram function and consume program or erase active
power until program or erase is completed.
28
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PA28F400BX-T60 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BX-T80 | 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400CV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PA28F400BV-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BX-B120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BX-B60 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BX-B80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400BX-T120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY |
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