參數(shù)資料
型號(hào)： OPA659IDBVR
廠商： Texas Instruments
文件頁(yè)數(shù)： 4/32頁(yè)
文件大?。?/td> 0K
描述： IC OPAMP JFET 650MHZ SGL SOT23-5
標(biāo)準(zhǔn)包裝： 3,000
放大器類(lèi)型： J-FET
電路數(shù)： 1
轉(zhuǎn)換速率： 2550 V/µs
增益帶寬積： 350MHz
-3db帶寬： 650MHz
電流 - 輸入偏壓： 10pA
電壓 - 輸入偏移： 1000µV
電流 - 電源： 32mA
電流 - 輸出 / 通道： 70mA
電壓 - 電源，單路/雙路(±)： ±3.5 V ~ 6.5 V
工作溫度： -40°C ~ 85°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： SC-74A，SOT-753
供應(yīng)商設(shè)備封裝： SOT-23-5
包裝： 帶卷 (TR)
APPLICATION INFORMATION
Wideband, Noninverting Operation
OPA659
R
OUT
0.1 F
m
10 F
m
0.1 F
m
10 F
m
50
Load
W
50
Source
W
R
T
R
G
V
IN
V
OUT
R
F
+6V
-
6V
OPA659
R
OUT
0.1 F
m
10 F
m
0.1 F
m
10 F
m
50
Load
W
50
Source
W
R
T
V
IN
V
OUT
+6V
-
6V
SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 ............................................................................................................................................ www.ti.com
Voltage-feedback op amps can use a wide range of
resistor values to set the gain. To retain a controlled
The OPA659 is a very broadband, unity-gain stable,
frequency response for the noninverting voltage
voltage-feedback amplifier with a high impedance
amplifier of Figure 35, the parallel combination of RF
JFET-input stage. Its very high gain bandwidth
|| RG should always be less than 200. In the
product (GBP) of 350MHz can be used to either
noninverting configuration, the parallel combination of
deliver high signal bandwidths for low-gain buffers, or
RF || RG forms a pole with the parasitic input and
to deliver broadband, low-noise, transimpedance
board layout capacitance at the inverting input of the
bandwidth to photodiode-detector applications. The
OPA659. For best performance, this pole should be
OPA659 is designed to to provide very low distortion
at
a
frequency
greater
than
the
closed-loop
and accurate pulse response with low overshoot and
bandwidth for the OPA659. For this reason, a direct
ringing. To achieve the full performance of the
short from the output to the inverting input is
OPA659, careful attention to printed circuit board
recommended for the unity-gain follower application.
(PCB) layout and component selection are required,
Table 1 lists several recommended resistor values for
as discussed in the remaining sections of this data
noninverting gains with a 50
input/output match.
sheet.
Figure 34 shows the noninverting gain of +1 circuit;
Figure 35 shows the more general circuit used for
other noninverting gains. These circuits are used as
the basis for most of the noninverting gain Typical
Characteristics graphs. Most of the graphs were
characterized using signal sources with 50
driving
impedance,
and
with
measurement
equipment
presenting a 50
load impedance. In Figure 34, the
shunt resistor RT at VIN should be set to 50 to
match the source impedance of the test generator
and cable, while the series output resistor, ROUT, at
VOUT should also be set to 50 to provide matching
impedance for the measurement equipment load and
cable.
Generally,
data
sheet
voltage
swing
Figure 35. General Noninverting Test Circuit
specifications are measured at the output pin, VOUT,
Table 1. Resistor Values for Noninverting Gains
with 50
Input/Output Match
NONINVERTING
GAIN
RF
RG
RT
ROUT
+1
0
Open
49.9
+2
249
49.9
+5
249
61.9
49.9
+10
249
27.4
49.9
Figure 34. Noninverting Gain of +1 Test Circuit
12
Copyright 2008–2009, Texas Instruments Incorporated
Product Folder Link(s): OPA659
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