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參數(shù)資料
| 型號(hào)： | NE34018-T1-63 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET |
| 封裝： | PLASTIC, SUPERMINI-4 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 77K |
| 代理商： | NE34018-T1-63 |
Data Sheet P11618EJ4V0DS00
15
NE34018
PRECAUTION
(1) Because this device is a HJ-FET with a Schottky barrier gate structure, it is necessary that sufficient care be
taken regarding static electricity and strong electric fields.
Take measures against static electricity and make sure the body is earthed when mounting the device.
(2) Follow the procedure below when operating the device by a gate-and-drain-independent dual power supply.
Directly ground both the source pins.
Fix VGS to approximately 2 V.
Increase VDS to a predetermined voltage level (within the recommended operating range of VDS).
Adjust VGS in line with a predetermined ID.
(3) It is recommended that the bias application circuit be able to have a fixed voltage and current.
(4) Adjust the I/O matching circuit after turning the bias OFF.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Soldering Conditions
Recommended Condition Symbol
Infrared Reflow
Package peak temperature: 230
°C or below,
Time: 30 seconds or less (at 210
°C or higher),
Count: 3 times or less, Exposure limit: None
Note
IR30-00-3
VPS
Package peak temperature: 215
°C or below,
Time: 40 seconds or less (at 200
°C or higher),
Count: 3 times or less, Exposure limit: None
Note
VP15-00-3
Wave Soldering
Soldering bath temperature: 260
°C or below,
Time: 10 seconds or less,
Count: 1 time, Exposure limit: None
Note
WS60-00-1
Partial Heating
Pin temperature: 230
°C or below,
Time: 10 seconds or less,
Exposure limit: None
Note
Note After opening the dry pack, store it at 25
°C or less and 65 % RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For the details the recommended soldering conditions, refer to the document SEMICONDUCTOR DEVICE
MOUNTING TECHNOLOGY MANUAL (C10535E).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE34018-T1-64 | 功能描述:MOSFET L-S Band Lo No Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE34018-T1-64-A | 功能描述:射頻GaAs晶體管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE34018-T1-A | 功能描述:射頻GaAs晶體管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE34018-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE34018-TI-63-A | 制造商:CEL 制造商全稱:CEL 功能描述:GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) |
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