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參數(shù)資料
| 型號： | NCN6000DTBR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 17/36頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC INTERFACE SMART CARD 20TSSOP |
| 產(chǎn)品變化通告： | Product Obsolescence 01/Jul/2009 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 應(yīng)用： | ATM 終端，氣泵，ISM |
| 接口： | 微控制器 |
| 電源電壓： | 2.7 V ~ 6 V |
| 封裝/外殼： | 20-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 20-TSSOP |
| 包裝： | 剪切帶 (CT) |
| 安裝類型： | 表面貼裝 |
| 其它名稱： | NCN6000DTBR2GOSCT |
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NCN6000
http://onsemi.com
24
Based on the experiments carried out during the
NCN6000 characterization, the best comprise, at time of
printing
this
document,
is
to
use
two
6.8
mF/10 V/Ceramic/X7R capacitor in parallel to achieve
the CRD_VCC filtering. The ESR will not extend 50 m
W
over the temperature range and the combination of standard
parts provide an acceptable –20% to +20% tolerance,
together with a low cost. Obviously, the capacitor must be
SMD type to achieve the extremely low ESR and ESL
necessary for this application. Figure 21 illustrates the
CRD_VCC ripple observed in the NCN6000 demo board
depending upon the type of capacitor used to filter the output
voltage.
Table 5. Ceramic/Electrolytic Capacitors Comparison
Manufacturers
Type/Series
Format
Max Value
Tolerance
Typ. Z @ 500 kHz
MURATA
CERAMIC/GRM225
0805
10
mF/6.3 V
+80%/20%
30 m
W
VISHAY
Tantalum/594C/593C
10
mF/16 V
450 m
W
VISHAY
Electrolytic/94SV
10
mF/10 V
20%/+20%
400 m
W
Electrolytic Low Cost
10
mF/10 V
35%/+50%
2.0
W
Top Trace = Electrolytic or Tantalum 10
mF
Bottom Trace = X7R 10
mF ceramic
The high ripple pulse across CRD_VCC is the consequence
of the large ESR of the electrolytic capacitor.
Figure 21. CRD_VCC Ripple as a Function of the Capacitor Technology
C= 10
mF
Electrolytic or Tantalum
C= 10
mF
Ceramic
NOTES: Rload = 100
W , Vbat = 5.0 V, CRD_VCC = 5.0 V
Cout = 10
mF/X7R, CRD_CLK = Stop High
Figure 22. External Capacitor Current Charge and
CRD_VCC Voltage Ripple.
Figure 23. CRD_VCC Voltage Ripple
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