參數(shù)資料
型號(hào)： MTB3N120E
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 3 A, 1200 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 6/12頁(yè)
文件大?。?/td> 322K
代理商： MTB3N120E
MTB3N120E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
10,000
1,000
100
10
1
0
400
600
1000
1200
100
°C
25
°C
2.5
2.0
1.5
1.0
0.5
0
– 50
– 25
0
25
50
75
100
125
150
VGS = 10 V
ID = 1.5 A
5.4
5.0
4.6
4.2
3.8
ID, DRAIN CURRENT (AMPS)
15 V
8
2
0
2
4
6
5
3
1
6
0
6
12
18
24
30
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
– 55
°C
TJ = 25°C
VGS = 10 V
VGS = 0 V
5
4
3
2
3
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
0
2
4
6
5
3
1
TJ = 125°C
1
6
4
200
25
°C
TJ = – 55°C
100
°C
25
°C
4 V
5 V
6 V
VGS = 10 V
TJ = 25°C
6
0
5
4
3
2
1
800
VGS = 10 V
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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