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參數(shù)資料
| 型號(hào)： | MTB50N06VL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | MTB50N06VL |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MTB50N06VL/D
MTB50N06VL
Preferred Device
Power MOSFET
42 Amps, 60 Volts, Logic Level
N–Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
±15
±20
Vdc
Vpk
Drain Current – Continuous @ 25
°C
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
42
30
147
Adc
Apk
Total Power Dissipation @ 25
°C
Derate above 25
°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
125
0.83
3.0
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
175
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5 Vdc, Peak
IL = 42 Apk, L = 0.3 mH, RG = 25 )
EAS
265
mJ
Thermal Resistance
– Junction to Case
– Junction to Ambient
– Junction to Ambient (Note 1.)
R
θJC
R
θJA
R
θJA
1.2
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from Case for 10
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
MARKING DIAGRAM
& PIN ASSIGNMENT
T50N06VL
YWW
1
Gate
4
Drain
2
Drain
3
Source
42 AMPERES
60 VOLTS
RDS(on) = 32 m
Device
Package
Shipping
ORDERING INFORMATION
MTB50N06VL
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
N–Channel
D
S
G
T50N06VL = Device Code
Y
= Year
WW
= Work Week
MTB50N06VLT4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
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| MTB52N06VL | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB52N06VLT4G | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
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| MTB50N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R |
| MTB50N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R |
| MTB50P03HDL | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLG | 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLT4 | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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